Nanya Technology is planning a phased expansion of Fab 5A in New Taipei City, Taiwan, to produce 10nm-class DRAM. The full buildout is reported to potentially reach about $16 billion, while a separate 2026–2029 investment program is capped at NT$346.6 billion, or about $10.7 billion.
What Nanya is planning at Fab 5A
Nanya’s new fab is planned for Taishan District in New Taipei City. The company says construction began in 2022 and describes a facility designed for phased expansion. The reported production plan covers 10nm-class 1b, 1c, 1d and 1e DRAM processes, with extreme ultraviolet (EUV) lithography equipment.
A capacity roadmap that starts in 2027
The reported schedule puts the first advanced-node wafer starts in the second half of 2027. Planned monthly capacity then rises in stages:
| Milestone | Planned monthly wafer target |
| 2028 | 30,000 wafers |
| 2029 | 35,900 wafers |
| Full planned capacity | Approximately 45,000 wafers |
These are wafer-volume targets. Nanya’s company page gives approximately 45,000 wafers per month as the fab’s ultimate planned capacity.
Why the expansion matters to the memory market
Major DRAM suppliers, including Samsung Electronics, SK hynix and Micron, have directed substantial capacity toward newer DRAM and high-bandwidth memory (HBM) for AI infrastructure. That shift has tightened supply of some mature-memory products, including DDR4 and DDR3. More advanced DRAM capacity from Nanya could contribute to future supply, but the schedule alone does not determine how much memory reaches customers or what happens to prices. Production yields, customer qualification, product mix and market demand all matter.
Nanya separately reported July 2026 revenue of NT$43,867.609 million, up 49.27% from June and 719.61% year over year. Those figures give a snapshot of the company’s business; the Fab 5A roadmap remains a separate, forward-looking project.
