A report published October 7, 2026, said AMD CEO Lisa Su visited Samsung Electronics in Seoul that day amid tight high-bandwidth memory (HBM) supply, with a broader partnership on the agenda. Samsung was also reported to be interested in extending its memory relationship with AMD into foundry work.
The March MOU covers memory and foundry exploration
Samsung Electronics and AMD announced a non-binding memorandum of understanding (MOU) on March 18, 2026. It covers HBM4 and advanced DDR5 supply, memory co-development, advanced packaging, and exploring foundry opportunities. Samsung said the companies would align on primary HBM4 supply for AMD’s Instinct MI455X.
The October discussions followed that framework, while the foundry interest remains a reported effort to broaden the relationship. The MOU describes exploring foundry opportunities; it does not set out an awarded production program.
MI455X is reported to carry 50% more HBM than MI355X
Reported specifications put AMD Instinct MI455X at 432 GB of HBM4 per accelerator, compared with 288 GB of HBM3E in Instinct MI355X. That is 144 GB more, or 50% above the MI355X baseline.
Lisa Su also said AMD had begun shipping its next-generation MI455 and Helios systems using HBM4, in remarks reported on October 7. The reported shipment statement concerns systems using HBM4; it does not identify the memory supplier for every unit.
Samsung’s reported foundry interest
Samsung was reportedly interested in turning its memory relationship with AMD into foundry orders. Foundries manufacture chips for other companies, and the March MOU places possible foundry work within the companies’ exploration scope.
AMD’s 2025 annual report lists delayed product introductions, lower yields and poorer performance among the risks of moving production to new manufacturers.
